INVESTIGATIONS OF NANOSTRUCTURED POROUS PBTE FILMS WITH X-RAY DIFFRACTOMETRY AND REFLECTOMETRY
14 сентября 2018
405
| Предметная область | — |
| Выходные данные | — |
| Ключевые слова | — |
| Вид публикации | Статья |
| Контактные данные автора публикации | ZIMIN S.P., VASIN V.M., GORLACHEV E.S., PETRAKOV A.P., SHILOV S.V. |
| Ссылка на публикацию в интернете | elibrary.ru/item.asp?id=16793239 |
Аннотация
In this work application of x-ray total external reflection method for the determination of the porosity value of PbTe and PbSe epitaxial films on silicon substrates subjected to anodic electrochemical etching in a Norr electrolyte was carried out. It is shown that the porosity values of the films can be in the range of 10-68% depending on the anodizing conditions. Triple-crystal x-ray diffractometry method was utilized for the estimation of quantitative characteristics of the pore dimensions along different directions. Nanometer-range pore dimensions and shape are estimated. © 2010 Copyright SPIE - The International Society for Optical Engineering.
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