Features of energy release in microvolumes of VLSI elements upon the effect of neutron radiation. Russian Microelectronics Volume 42, Issue 7, December 2013, Pages 424-427
14 сентября 2018
218
| Предметная область | — |
| Выходные данные | — |
| Ключевые слова | — |
| Вид публикации | Статья |
| Контактные данные автора публикации | Chumakov, A.I.a, Afonin, A.V.b, Polunin, V.A.c ; a ENPO Specialized Electron Systems, Kashirskoe sh. 31, Moscow 115409, Russian Federation b SNPO Eleron, ul. Generala Belova 14, Moscow 115563, Russian Federation c Institute of Extreme Applied Ele |
| Ссылка на публикацию в интернете | www.scopus.com |
Аннотация
An analytical model is suggested and the numerical modeling of energy release under the effect of neutrons in microvolumes of VLSI active elements allowing for the effect of surrounding materials is performed. The developed model for evaluating the sections of local radiation effects shows satisfactory agreement with the results of existing approaches.
Indexed keywords
Active elements; Developed model; Energy release; Local radiation effects; Neutron radiations; Nuclear particles; Surrounding materials; VLSI
Engineering controlled terms: Magnetic materials; Microelectronics
Indexed keywords
Active elements; Developed model; Energy release; Local radiation effects; Neutron radiations; Nuclear particles; Surrounding materials; VLSI
Engineering controlled terms: Magnetic materials; Microelectronics
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