Resonant tunneling of interacting electrons in an AC electric field. Journal of Experimental and Theoretical Physics Volume 117, Issue 5, November 2013, Pages 950-962

14 сентября 2018
127
Предметная область
Выходные данные
Ключевые слова
Вид публикации Статья
Контактные данные автора публикации Elesin, V.F.
Ссылка на публикацию в интернете www.scopus.com

Аннотация

The problem of the effect of electron-electron interaction on the static and dynamic properties of a double-barrier nanostructure (resonant tunneling diode (RTD)) is studied in terms of a coherent tunneling model, which includes a set of Schrödinger and Poisson equations with open boundary conditions. Explicit analytical expressions are derived for dc and ac potentials and reduced (active and reactive) currents in the quasi-classical approximation over a wide frequency range. These expressions are used to analyze the frequency characteristics of RTD. It is shown that the interaction can radically change the form of these expressions, especially in the case of a hysteretic I-V characteristic. In this case, the active current and the ac potentials can increase sharply at both low and high frequencies. For this increase to occur, it is necessary to meet quantum regime conditions and to choose a proper working point in the I-V characteristic of RTD. The possibility of appearance of specific plasma oscillations, which can improve the high-frequency characteristics of RTD, is predicted. It is found that the active current can be comparable with the resonant dc current of RTD.
Indexed keywords
Analytical expressions; Frequency characteristic; High frequency characteristics; Interacting electrons; IV characteristics; Low and high frequencies; Open boundary condition; Wide frequency range
Подробнее
Для того чтобы оставить комментарий необходимо авторизоваться.