Persistent photoconductivity and electron mobility in In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As/InP quantum-well structures. Semiconductors Volume 47, Issue 7, July 2013, Pages 935-942

14 сентября 2018
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Контактные данные автора публикации Kulbachinskii, V.A.a , Lunin, R.A.a, Yuzeeva, N.A.ac, Vasilievskii, I.S.b, Galiev, G.B.c, Klimov, E.A.c a Department of Low-Temperature Physics and Superconductivity, Moscow State University, Moscow, 119991, Russian Federation b National Researc
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Аннотация

The influence of the width of the quantum well L and doping on the band structure, scattering, and electron mobility in nanoheterostructures with an isomorphic In0.52Al0.48As/In0.53Ga0.47As/In0.52Al0.48As quantum well grown on an InP substrate are investigated. The quantum and transport mobilities of electrons in the dimensionally quantized subbands are determined using Shubnikov-de Haas effect measurements. These mobilities are also calculated for the case of ionized-impurity scattering taking into account intersub-band electron transitions. It is shown that ionized-impurity scattering is the dominant mechanism of electron scattering. At temperatures T < 170 K, persistent photoconductivity is observed, which is explained by the spatial separation of photoexcited charge carriers.
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