Study of new designs for the InAlAs metamorphic buffer on GaAs substrates with distributed compensation of elastic deformations. Semiconductors Volume 47, Issue 7, July 2013, Pages 997-1002
14 сентября 2018
233
| Предметная область | — |
| Выходные данные | — |
| Ключевые слова | — |
| Вид публикации | Статья |
| Контактные данные автора публикации | Galiev, G.B.a, Pushkarev, S.S.ab , Vasilevskii, I.S.b, Klimov, E.A.a, Imamov, R.M.c a Institute of Ultrahigh Frequency Semiconductor Electronics, Russian Academy of Sciences, Nagornyi pr. 7, str. 5, Moscow, 117105, Russian Federation b National R |
| Ссылка на публикацию в интернете | www.scopus.com |
Аннотация
Two new designs for a metamorphic buffer, which are modifications of the InxAl1-xAs metamorphic buffer due to groups of layers with differing lattice parameters, are proposed and implemented. This makes it possible to affect the relaxation of the metamorphic buffer. The structural and electrical characteristics of the obtained metamorphic HEMT nanoheterostructures are also studied.
Для того чтобы оставить комментарий необходимо авторизоваться.