Total yield of channeling radiation from relativistic electrons in thin Si and W crystals. Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms Volume 309, 2013, Pages 59-62

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Контактные данные автора публикации	Abdrashitov, S.V.ab, Bogdanov, O.V.ac, Dabagov, S.B.cd, Pivovarov, Y.L.a, Tukhfatullin, T.A.a a Tomsk Polytechnic University, Lenin Ave. 30, 634050 Tomsk, Russian Federation b Tomsk State University, Lenin Ave. 36, 634050 Tomsk, Russian Federati
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Аннотация

Orientation dependences of channeling radiation total yield from relativistic 155-855 MeV electrons at both h100i axial and (100) planar channeling in thin silicon and tungsten crystals are studied by means of computer simulations. The model as well as computer code developed allows getting the quantitative results for orientation dependence of channeling radiation that can be used for crystal alignment in channeling experiments and/or for diagnostics of initial angular divergence of electron beam. © 2013 Elsevier B.V. All rights reserved.
Author keywords
Axial channeling; Channeling radiation; Planar channeling
Indexed keywords
Angular divergence; Axial channeling; Channeling radiation; Crystal alignment; Orientation dependence; Planar channeling; Quantitative result; Relativistic electron

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