Maximum drift velocity of electrons in selectively doped InAlAs/InGaAs/InAlAs heterostructures with InAs inserts. Semiconductors Volume 47, Issue 3, 2013, Pages 372-375
14 сентября 2018
201
| Предметная область | — |
| Выходные данные | — |
| Ключевые слова | — |
| Вид публикации | Статья |
| Контактные данные автора публикации | Šilenas, A.a, Požela, Y.a , Požela, K.a, Juciene, V.a, Vasilevskii, I.S.bc, Galiev, G.B.b, Pushkarev, S.S.b, Klimov, E.A.b a Semiconductor Physics Institute, Center for Physical Sciences and Technology, Vilnius, 01108, Li |
| Ссылка на публикацию в интернете | www.scopus.com/record/display.url?origin=recordpage&eid=2-s2.0-84874798709&citeCnt=3&noHighlight=false&sort=plf-f&src=s&st1=MEPhI&nlo=&nlr=&nls=&sid=F0743CC1BB1CEC168410A18CB87C48A7.Vdktg6RVtMfaQJ4pNTCQ:6500&sot=b&sdt=b&sl=31&s=AFFIL(MEPhI) AND PU |
Аннотация
The dependence of the electron mobility and drift velocity on the growth conditions, thickness, and doping of an InAs insert placed at the center of the quantum well in a selectively doped InAlAs/InGaAs/InAlAs heterostructure has been investigated. Record enhancement of the maximum drift velocity to (2-4) × 107 cm/s in an electric field of 5 × 103 V/cm has been obtained in a 17-nm-wide quantum well with an undoped 4-nm-thick InAs insert. In the structures with additional doping of the InAs insert, which facilitates an increase in the density of electrons in the quantum well to 4. 0 × 1012 cm-2, the maximum drift velocity is as high as 2 × 107 cm/s in an electric field of 7 × 103 V/cm.
Для того чтобы оставить комментарий необходимо авторизоваться.