Simulating resistive switching in heterostructures based on oxide compounds. Bulletin of the Russian Academy of Sciences: Physics Volume 77, Issue 3, March 2013, Pages 265-267
14 сентября 2018
210
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| Вид публикации | Статья |
| Контактные данные автора публикации | Tulina, N.A.a , Sirotkin, V.V.b, Borisenko, I.Y.b, Ivanov, A.A.c a Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka 142432, Russian Federation b Institute of Microelectronics Technology and High Purity M |
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Аннотация
Simulations are used to study the influence of nonuniform electric field distribution at a heterojunction interface on the effect of bipolar resistive switching in oxide compounds. Computer models show that a conducting channel forms at the edge of a heterojunction area characterized by strong local increase in the electric field intensity. The computations are confirmed by the low temperature properties of metastable phases in heterojunctions based on high temperature superconductors. © 2013 Allerton Press, Inc.
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Indexed keywords
Computer models; Conducting channels; Electric field intensities; Heterojunction interfaces; Nonuniform electric field; Oxide compounds; Resistive switching
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Indexed keywords
Computer models; Conducting channels; Electric field intensities; Heterojunction interfaces; Nonuniform electric field; Oxide compounds; Resistive switching
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