Effect of the emitter spacer level on the peak current of resonant tunneling diode . Nanotechnologies in Russia Volume 8, Issue 3-4, March 2013, Pages 250-254

14 сентября 2018
Предметная область
Выходные данные
Ключевые слова
Вид публикации Статья
Контактные данные автора публикации Elesin, V.F., Remnev, M.A. National Nuclear Research Institute (MEPhI),
Ссылка на публикацию в интернете www.scopus.com/record/display.url?origin=recordpage&eid=2-s2.0-84877592960&citeCnt=3&noHighlight=false&sort=plf-f&src=s&st1=MEPhI&nlo=&nlr=&nls=&sid=F0743CC1BB1CEC168410A18CB87C48A7.Vdktg6RVtMfaQJ4pNTCQ:6500&sot=b&sdt=b&sl=31&s=AFFIL(MEPhI) AND PU


The dependence of the peak current in the I-V characteristic of a resonant tunneling diode on the emitter spacer thickness has been investigated by numerically solving the Schrödinger equation. This dependence has pronounced maxima in which the peak current greatly exceeds that in minima. The mechanism of the formation of maxima has been revealed. These maxima are caused by the overlap of the emitter spacer level and the resonant level of the quantum well. The influence of electron-electron interaction on the effect has been studied; it is shown that the interaction barely affects the peak current in the forward bias direction and somewhat decreases it in the reverse direction. © 2013 Pleiades Publishing, Ltd.


Indexed keywords

Dinger equation; Forward bias; IV characteristics; Peak currents; Resonant levels; Spacer thickness
Для того чтобы оставить комментарий необходимо авторизоваться.