Transient processes in resonant tunneling diode with allowance for electron-electron interaction . Nanotechnologies in Russia Volume 8, Issue 3-4, March 2013, Pages 245-249

14 сентября 2018
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Контактные данные автора публикации Elesin, V.F.a , Kateev, I.Y.b, Sukochev, A.Y.a a National Nuclear Research Institute MEPhI, Kashirskoe sh. 31, Moscow, 115409, Russian Federation b Institute of Physics and Technology, Russian Academy of Sciences
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Аннотация

The effect of strong electron-electron interaction on transient processes in a resonant tunneling diode (RTD) has been investigated. The transient current caused by instantaneously switching a bias voltage and switching on an incident flow has been calculated using a numerical solution of the Schrödinger equation within the Hartree approximation. The RTD transition from a high-current state to a low-current state is calculated in the presence of hysteresis. The behavior of the transition is analyzed and its duration is found. It is shown that, when the bias jump exceeds the level width Γ, the transition switching time is very short (on the order of 10-13 s) and the RTD can be used as an ultrafast switch. The transient periods of constructive interference in the quantum well and destructive interference in the emitter are found to be on the order of 5/Γ. © 2013 Pleiades Publishing, Ltd.



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Indexed keywords

Constructive interference; Destructive interference; Dinger equation; Numerical solution; Switching time; Transient current; Transient periods; Transient process
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