Metamorphic InAlAs/InGaAs/InAlAs/GaAs HEMT heterostructures containing strained superlattices and inverse steps in the metamorphic buffer . Journal of Crystal Growth Volume 366, 2013, Pages 55-60
14 сентября 2018
220
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| Вид публикации | Статья |
| Контактные данные автора публикации | Galiev, G.B.a, Vasilevskii, I.S.b , Pushkarev, S.S.ab , Klimov, E.A.a, Imamov, R.M.c , Buffat, P.A.d , Dwir, B.e , Suvorova, E.I.c a Institute of Ultrahigh Frequency Semiconductor Electronics, Russian Academy of Science, |
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Аннотация
Metamorphic InxAl1-xAs buffer design features influence on electrophysical and structural properties of the heterostructures was investigated. Two types of MHEMT heterostructures In0.70Al0.30As/In0.76Ga0.24As with novel design contained inverse steps or strained superlattices were grown by MBE on GaAs substrates. Electrophysical properties of the heterostructures were characterized by Hall measurements, while the structural features were described with the help of different transmission electron microscopy techniques. The metamorphic HEMT with strained superlattices inserted in the metamorphic buffer had the smoother surface and more defect-free crystal structure, as well as a higher Hall mobility, than metamorphic HEMT with inverse steps within the metamorphic buffer. © 2012 Elsevier B.V. All rights reserved.
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Author keywords
A1. Dislocations; A3. Metamorphic buffer; A3. Molecular beam epitaxy; A3. Quantum wells; A3. Strained superlattices; B2. Semiconducting indium aluminum arsenide; B2. Semiconducting indium gallium arsenide; B3. High electron mobility transistors
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Indexed keywords
Electrophysical properties; GaAs substrates; Hall measurements; Indium aluminum arsenide; Metamorphic buffers; Metamorphic HEMTs; Strained superlattice; Structural feature
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Author keywords
A1. Dislocations; A3. Metamorphic buffer; A3. Molecular beam epitaxy; A3. Quantum wells; A3. Strained superlattices; B2. Semiconducting indium aluminum arsenide; B2. Semiconducting indium gallium arsenide; B3. High electron mobility transistors
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Indexed keywords
Electrophysical properties; GaAs substrates; Hall measurements; Indium aluminum arsenide; Metamorphic buffers; Metamorphic HEMTs; Strained superlattice; Structural feature
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