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Prospects of using in-containing semiconductor materials in magnetic field sensors for thermonuclear reactor magnetic diagnostics . IEEE Transactions on Magnetics Volume 49, Issue 1, 2013, Article number 6392361, Pages 50-53

НИЯУ МИФИ
14 сентября 2018
217
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Вид публикации Статья
Контактные данные автора публикации Bolshakova, I.a, Vasilevskii, I.b, Viererbl, L.c, Duran, I.d , Kovalyova, N.a, Kovarik, K.d, Kost, Y.a, Makido, O.a, Sentkerestiova, J.e, Shtabalyuk, A.a, Shurygin, F.a a Magnetic Sensor Laboratory, Lviv Polytech
Ссылка на публикацию в интернете www.scopus.com/record/display.url?origin=recordpage&eid=2-s2.0-84871837222&citeCnt=3&noHighlight=false&sort=plf-f&src=s&st1=MEPhI&nlo=&nlr=&nls=&sid=F0743CC1BB1CEC168410A18CB87C48A7.Vdktg6RVtMfaQJ4pNTCQ:6500&sot=b&sdt=b&sl=31&s=AFFIL(MEPhI) AND PU

Аннотация

The work presents the results of experimental investigation into the effect of neutron irradiation on thin-film magnetic field Hall sensors. It is shown that sensors based on InSb/i-GaAs heterostructures are promising for application under radiation conditions in thermonuclear reactor magnetic diagnostics systems. At the same time, the presence of buffer layers in InAs/i-GaAs heterostructures makes this material unfit for application under neutron flux conditions. © 1965-2012 IEEE.



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Author keywords

III-V semiconductor materials; magnetic sensors; neutron radiation effects; radiation-resistant Hall sensors



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Indexed keywords

Experimental investigations; Flux conditions; Hall sensor; InAs; Magnetic diagnostic; Magnetic field sensors; Neutron radiation effects; Radiation condition
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