Extracting the fitting parameters for the conversion model of enhanced low dose rate sensitivity in bipolar devices . Russian Microelectronics Volume 42, Issue 1, January 2013, Pages 48-52

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Вид публикации	Статья
Контактные данные автора публикации	Bakerenkov, A.S.a, Belyakov, V.V.a , Pershenkov, V.S.a, Romanenko, A.A.b, Savchenkov, D.V.ac, Shurenkov, V.V.a a National Research Nuclear University MEPhI, Moscow, Russian Federation b Research Institute of Instruments, Lytk
Ссылка на публикацию в интернете	www.scopus.com/record/display.url?origin=recordpage&eid=2-s2.0-84872360278&citeCnt=3&noHighlight=false&sort=plf-f&src=s&st1=MEPhI&nlo=&nlr=&nls=&sid=F0743CC1BB1CEC168410A18CB87C48A7.Vdktg6RVtMfaQJ4pNTCQ:6500&sot=b&sdt=b&sl=31&s=AFFIL(MEPhI) AND PU

Аннотация

A technique for extracting the fitting parameters of the conversion model of enhanced low dose rate sensitivity in bipolar integrated circuits is proposed. This technique is based on studying postirradiation annealing and high-temperature irradiation. Proceeding from the experimental results for two types of bipolar transistors, the parameters of the conversion model are determined and the S-shaped characteristics of the examined devices are reconstructed. These data can be used to predict their long-term lifetime in space under exposure to low dose rates of ionizing radiation. © 2013 Pleiades Publishing, Ltd.

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Indexed keywords

Bipolar device; Conversion model; Enhanced low-dose-rate sensitivity; Fitting parameters; High temperature irradiation; Low dose rate; Postirradiation annealing; S-shaped

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