Microdose induced drain leakage effects in power trench MOSFETs: Experiment and modeling. Proceedings of the European Conference on Radiation and its Effects on Components and Systems, RADECS, 28 October 2014, Article number 6937359

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Вид публикации	Тематический материал
Контактные данные автора публикации	Zebrev, G.I.a , Vatuev, A.S.b, Useinov, R.G.b, Emeliyanov, V.V.b, Anashin, V.S.c, Gorbunov, M.S.d, Turin, V.O.e a Department of Micro, Nanoelectronics of National Research Nuclear University MEPHI, Moscow, Russian Federation
Ссылка на публикацию в интернете	www.scopus.com/record/display.url?origin=recordpage&eid=2-s2.0-84929008967&citeCnt=3&noHighlight=false&sort=plf-f&src=s&st1=MEPhI&nlo=&nlr=&nls=&sid=F0743CC1BB1CEC168410A18CB87C48A7.Vdktg6RVtMfaQJ4pNTCQ:6500&sot=b&sdt=b&sl=31&s=AFFIL(MEPhI) AND PU

Аннотация

We study experimentally and theoretically the microdose induced drain-source leakage current in the trench power MOSFETs under irradiation with high-LET heavy ions. We have found experimentally that cumulative increase of leakage drain current occurs by means of stochastic steps corresponding to strike of a single heavy ion into the MOSFET gate oxide. We simulate this effect with the proposed analytic model allowing to describe (including Monte Carlo methods) both the deterministic (cumulative dose) and stochastic (single event) aspects of the problem. Based on this model the survival probability assessment in space heavy ion environment with high LETs has been proposed. © 2013 IEEE.

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Author keywords

heavy ions; LET; Microdose effects; Monte Carlo; parametric failures; parasitic transistor; singleevent effects; source-drain leakage; total dose effects; trench power MOSFETs

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